Gigabit memory with long-term recent

Scientists from the Max Planck Institute for Microstructure Physics is an important step in the development of "Non-purged fixed corporate storage" succeded

Even the most powerful PCs and notebooks have a relatively short mind. Your main memory that is on the specialist minus "Dynamic Random Access Memories" (DRAMS) were baptized, several hundred times must be electronically charged in the second, and as soon as the device is no longer powered, all unsaved data will be lost. The semiconductor research has therefore been focusing on the development for quite some time "Non-purged fixed body storage", which the ever new loading of the hard disk, yes even the boot of a computer should make overflow.

Scientist from the Max Planck Institute for Microstructure Physics in Halle on the Saale seem to be a rough step in this strike. For the first time they have succeeded in order to apply the ferroelectric material lanthanum-bismuth-titanium oxide to silicon wafers in a virtually optimal crystal orientation and thus achieve an extremely high storage capacity.

For a long time, the experts agree that the non-cured memory modules, those still have a little legendary "Magnetic Random Access Memories" (MRAMS) or. "FERROELECTRIC RANDOM ACCESS MEMORIES" (Frams) on ferromagnetic resp. Ferroelectric materials must be based. In order to guarantee their smooth interaction with the silicon microelectronics, it is necessary to place these materials in very dun layers on silicon wafers. But that’s the problem so far. For the ferroelectric lanthanum bismuth-titanium oxide (LA0.75BI3,25Ti4012) was purely theoretically perfect for the construction of monumental long-term storage, but as soon as it was cut in Dunne layers, the material grew in a crystal orientation, which for the Rewrought memory function was unfavorable. The special properties of lanthanum-bismuth-oxide depends on whether the crystals also grow in dun layers after the so-called A-axis orientation.

The Max Planck scientists have apparently solved this complicated problem, because the layers they have developed have the required A-axis orientation at least 99%. However, that they owe this success of a 60 nanometer-cubic oxide buffer layer, a 10 nanometer-comprehensive electrode layer of strontium ruthenium oxide and particularly high oxygen prere, is less exciting than the fact that its material mixture is actually influenced above the hoped-for storage capacita. Because both in terms of the "Remanent polarization" (Coarse of the possible memory signal as a stored charge per flat unit) and with regard to the "Encouragement" (Long-term stability of the storage layer) reached the lanthanum bismuth-titanium oxide surprising best values. In the "Remanent polarization" If the researchers have 32 microcoulomb per square centimeter – which corresponds to an increase towards the previous results of about 10 microcoulomb -, and also the "Encouragement" Located far over the average. The hallsers could prove that the remanent polarization of their material after 10 billion read-write cycles only by approx. 9% decreases.

Like this post? Please share to your friends:
Leave a Reply

;-) :| :x :twisted: :smile: :shock: :sad: :roll: :razz: :oops: :o :mrgreen: :lol: :idea: :grin: :evil: :cry: :cool: :arrow: :???: :?: :!: